“Ion Implantation” Research Papers, August 2021 — summary from Astrophysics Data System and Springer Nature

Astrophysics Data System — summary generated by Brevi Assistant

Ruby is a mineral in the corundum family members and it is extremely important as a gemstone. From the physics perspective, the ruby coloration depends on the balance of trace or chromophore contaminations and issue complexes in the Al 2 O 3 lattice. A contrast research on the optical buildings of Silicon nanostructures have been done. Fascinating observation in this work is that after a limit etching time, the formed Silicon nanowires begin breaking up and micro-etching takes location with more increase in engraving time. The combination in Si modern technology of highly doped of Ge layers with a controlled amount of pressure is important for nanoelectronic and photonic applications. N-type doping of Ge layers epitaxially expanded on Si by P ion-implantation and pulsed laser melting is reported. Nitrogen Plasma Immersion Ion Implantation was carried out in the Metal Cylindrical Sieve setup that is composed of Stainless Steel 308 L spiral spring injury wire. The plasma density near the wire is inadequate to conquer the sheath overlapping in between the spiral spring paths when the existing is reduced, which causes high sputtering of the cable surface area. A synthesis procedure is offered for experimentally imitating alterations in cosmic dirt grains using sequential ion implantations or irradiations followed by thermal annealing. Planetary silicate dust analogues were prepared using implantation of 20–80 keV Fe -, Mg -, and O — ions into commercially offered p-type silicon wafers. Thermal development and movement behavior of nitrogen dopants in indium doped ZnO movies implanted with high-dose N ions were investigated through experiment and first-principles calculations. At low-temperature area, the interaction of substitutional nitrogen acceptor and interstitial nitrogen starts to occur, which brings about a reduction in N O acceptor and the formation of additional molecular nitrogen at oxygen site [O]

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Springer Nature — summary generated by Brevi Assistant

Fe_3O_4 thin films on Si substratum were prepared by chemical service deposition strategy. The dosage of N_2 ion implantation in Fe_3O_4 slim films differs from 0 to 3 × 10 ^ 16 ions/cm ^ 2. Front-illuminated GaN-based p-i-n ultraviolet avalanche photodiodes were grown by metalorganic chemical vapor deposition on a free-standing GaN substratum. Atomic force microscopy dimensions reveal well-developed atomic step-flow morphologies with sub-nanometer root-mean-square surface roughness for scan dimensions of 1 × 1 μm² μ m 2 and 5 × 5 μm² μ m 2 Mesa etching is just one of the major challenges in the manufacture of these devices. The devices show an extremely reduced reverse-bias reduced leakage existing density of listed below 10 ^ − 10 A/cm ^ 2 as much as − 35 V. An optimum reproduction gain of 1 × 10 ^ 6 under λ = 355 nm lighting was demonstrated. Due to the relevance of discerning location doping in GaN to make it possible for planar process innovation, and to prevent the complications from the etch/regrowth procedure, ion implantation is the well-known option. The outcomes reveal that poorer high quality cap movies allow nitrogen to leave the crystal during annealing and leave nitrogen openings behind. The outcomes recommend that sitting epitaxial-grown AlN caps are preferable for GaN activation annealing, and high-temperature slim caps provide the most effective barrier to stop crystal disintegration. This paper suggests the use of nitrogen ion implantation to create circular and donut-shaped networks in vertical GaN Schottky obstacle diodes. Nitrogen ions with a dosage of 1 × 10 ^ 15 centimeters ^ − 2 and energy of 100/150 keV were made use of to develop a present obstructing layer to divide the channel from the mesa side, thus reducing the etching damage-induced leak in the reverse predisposition. In enhancement, the SBD with a donut-shaped network showed improved particular on-resistance because it had a larger existing spread than did the SBD with a circular channel.

Please keep in mind that the text is machine-generated by the Brevi Technologies’ Natural language Generation model, and we do not bear any responsibility. The text above has not been edited and/or modified in any way.

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