“Ion Implantation ” Science-Research, September 2021 — summary from Astrophysics Data System, Springer Nature, Department of Energy Pages | Public Access Gateway for Energy & Science, DOAJ and NASA Technology Transfer Program

Astrophysics Data System — summary generated by Brevi Assistant

We report monitorings of the Raman spectra of 10 keV hydrogen ion-implanted crystalline quartz, lithium niobate and tellurium dioxide over a variety of ion fluences? Nevertheless, the appearance of this feature in tellurium dioxide has a slightly different practices. While interstitial molecular O2 has previously been observed in irradiated quartz, the existence of this atomic oxygen trademark in proton-irradiated lithium niobate and tellurium dioxide has not been previously reported. We report on the stability and magnetic state of ion implanted ^8 Li in solitary crystals of the semiconductor ZnO making use of β -discovered nuclear magnetic vibration. At ultradilute focus, the spectra disclose distinct Li sites from 7.6 to 400 K. Ionized shallow donor interstitial Li is steady throughout the whole temperature level array, verifying its capacity to self-compensate the acceptor character of its substitutional equivalent. Like the interstitial, the substitutional programs no dealt with hyperfine splitting, suggesting it is also fully ionized above 210 K. The electric field gradient at the interstitial ^8 Li displays considerable temperature level dependancy with a power regulation regular of non-cubic steels. A synthesis procedure exists for experimentally mimicing alterations in cosmic dirt grains utilizing sequential ion implantations or irradiations complied with by thermal annealing. 600 keV helium ion irradiation was executed on among the examples before thermal annealing. RBS analysis reveals redistribution of the implanted Fe, Mg, and O after thermal annealing because of unification into the crystal frameworks for each sample type.

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Springer Nature — summary generated by Brevi Assistant

Fe_3O_4 slim films on Si substratum were prepared by chemical service deposition strategy. The dose of N_2 ion implantation in Fe_3O_4 slim films varies from 0 to 3 × 10 ^ 16 ions/cm ^ 2. Abstract Five W-alloy specimens, containing 8.57% Ni, 6.34% Cu, and 1.34% Mo, were bombarded with 5.2 MeV singly charged nitrogen ions. The increase in the worths of all the parameters with ions dose is fast in the variety of 0- 1 × 10 ^ 15 ions/cm ^ 2 and later sluggish till the maximum ions dosage 1 × 10 ^ 16 ions/cm ^ 2. On the other hand, surface area firmness signs up a surge as crystallite size rises, and hence complies with Inverse Hall- Petch connection. This paper recommends making use of nitrogen ion implantation to create circular and donut-shaped channels in upright GaN Schottky obstacle diodes. Nitrogen ions with a dose of 1 × 10 ^ 15 cm ^ − 2 and energy of 100/150 keV were utilized to create a current blocking layer to divide the network from the mesa side, hence reducing the etching damage-induced leak in the reverse bias. Furthermore, the SBD with a donut-shaped channel displayed improved details on-resistance due to the fact that it had a wider current spread than did the SBD with a round channel.

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Department of Energy Pages | Public Access Gateway for Energy & Science — summary generated by Brevi Assistant

Focussed Beam milling is a mainstay of nano-scale machining. Making Use Of Bragg Coherent X-ray Diffraction Imaging, we have the ability to spatially-resolve the complete latticework strain tensor in FIB-milled gold nano-crystals. Tungsten is the main candidate material for plasma-facing armour parts in future combination reactors. Below we check this theory by applying it in a crystal plasticity finite component formula, imitating nano-indentation in W-3000He at 300 K. The version considers thermally-activated misplacement slide via helium-defect barriers, whose obstacle toughness is obtained as a function of defect concentration and morphology. Expertise in mechanical and physical property advancement as a result of irradiation damage is essential for the growth of future fission and blend activators. Ion-irradiation gives an outstanding proxy for researching irradiation damage, enabling high damage dosages without sample activation. Towards building large integrated photonic systems for quantum info processing, spectral and spatial positioning of single quantum systems to photonic nanocavities is required. In this paper, we show spatially targeted implantation of nitrogen vacancy centers right into the setting optimum of 2-d ruby photonic crystal tooth cavities with top quality variables up to 8000, attaining a standard of 1.1 ± 0.2 NVs per dental caries. Because of the supply restraints and environmental concerns, rare-earth-free magnets are highly required by tidy and eco-friendly energy markets. With the tunable capability of the ion implantation fluence and energy, a microstructure with grain dimension 25- 30nm is constructed on the FeN aluminum foil example with the implantation fluence of 5 × 10 17/ centimeters 2.

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DOAJ — summary generated by Brevi Assistant

The high-speed steel HS 6–52 cutting inserts covered with TiN went through ion implantation with both silicon and silicon with nitrogen ions on the subsurface layer of the rake face. The transforming examinations of 40H building steel with making use of the cutting inserts dental implanted and non-implanted were executed. During the tests, the two parts of the net reducing pressure as well as the wear criteria VB on the significant flankalong with the surface area roughness were determined. The laser-matter interaction utilizing nominal laser intensity above 1015 W/cm2 generates in vacuum non-equilibrium plasmas increasing ions at powers from tens keV as much as hundreds MeV. Usually, the ion powers adhere to a Boltzmann-like distribution defined by a cutoff at high energy and by a Coulomb-shift in the direction of high energy, increasing the ion charge state. The accelerated ions are produced with high directivity, relying on the ion charge state and ion mass, along the normal to the target surface area. Ion implantation is a superior post-synthesis doping method to tailor the structural properties of materials. It is discovered that a solitary event Ga, Ge or As atom can substitute a carbon atom of graphene latticework due to the head-on crash as their preliminary kinetic energies lie in the series of 25- 26 eV/atom, 22- 33 eV/atom and 19- 42 eV/atom, respectively. Owing to the different chemical interactions between occurrence atom and graphene latticework, Ge and As atoms have a vast kinetic energy home window for implantation, while Ga do not.

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NASA Technology Transfer Program — summary generated by Brevi Assistant

A battery cost equalizer created at NASA’s Johnson Space Center gives private cell butting in multi-cell battery strings using a minimum variety of transformers. NASA seeks interesting celebrations to accredit the Battery Management System developed by trendsetters at Johnson Space Center. NASA’s BMS includes the ability to stabilize the charge and keep an eye on specific battery cells that remain in series and provide fault discovery of private cells in parallel within a battery pack of thousands of cells. NASA’s Glenn Research Center has developed and patented the Compact Full-Field Ion Detector System, a radiation bit detection system that offers info on the kinetic powers, directions, and electrical charges of subatomic bits. Trendsetters at NASA’s Glenn Research Center have established new technologies that boost the operational life time of a Hall impact thruster, which is utilized primarily on Earth-orbiting satellites and can also be used for deep-space robot vehicles. The functional lifetime of HETs is established by the quantity of time the thruster can operate before the plasma within the network harms the magnetic system. Small satellites are satellites of reduced mass and size, normally under 500 kg. Previous attempts to make use of vacuum cleaner arc technology for spacecraft propulsion have had numerous issues. NASAs Marshall Research Center has created a system for generating iodine vapor from strong iodine, for use as a propellant in a Hall or ion thruster propulsion system. Xenon has usually been the recommended propellant of selection for these spacecraft ion propulsion systems, yet much more recently, iodine-based systems have gotten considerable attention as a result of comparable performance to xenon, and the system-level advantages of reduced storage pressure and greater storage space thickness with even more propellant per device volume.

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